Transfer-Free Synthesis of Atomically Precise Graphene Nanoribbons on Insulating Substrates

The rational bottom-up synthesis of graphene nanoribbons (GNRs) provides atomically precise control widths and edges that give rise to a wide range electronic properties promising for devices such as field-effect transistors (FETs). Since the commonly takes place on catalytic metallic surfaces, integration GNRs into requires their transfer onto insulating substrates, which remains one bottlenecks in development GNR-based electronics. Herein, we report method transfer-free placement insulators. This involves growing gold film deposited an layer followed by gentle wet etching gold, leaves settle underlying substrate. Scanning tunneling microscopy Raman spectroscopy confirm high density uniformly grow films SiO2/Si substrates remain structurally intact after process. We have also demonstrated fabrication ultrashort channel GNR FETs using this A very important aspect present work is can scale up well 12 in. wafers, extremely difficult previous techniques. Our here thus represents step toward large-scale devices.